The B. Jayant Baliga Papers, 1973-2023, contain many records from the Power Semiconductor Research Center (PSRC) at North Carolina State University, as well as patents, materials relating to the Electric Power Research Institute (EPRI), course materials produced and used by Baliga as a professor at NCSU, some of Baliga's ...
MoreThe B. Jayant Baliga Papers, 1973-2023, contain many records from the Power Semiconductor Research Center (PSRC) at North Carolina State University, as well as patents, materials relating to the Electric Power Research Institute (EPRI), course materials produced and used by Baliga as a professor at NCSU, some of Baliga's publications, and general professional records. These papers document Baliga’s research interests and provide institutional, as well as project, records vital to understanding the impact which B. Jayant Baliga has had in the fields of electrical and computer engineering. B. Jayant Baliga (1948- ) is an internationally recognized expert on power semiconductor devices. He is a member of the National Academy of Engineering and a Fellow of the IEEE (Institute of Electrical and Electronics Engineers). He spent 15 years at the General Electric Research and Development Center, Schenectady, New York, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. While at GE, he invented the Insulated Gate Bipolar Transistor (IGBT). He joined the faculty of North Carolina State University in 1988.
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