The B. Jayant Baliga Papers, 1973-2020, contain many records from the Power Semiconductor Research Center (PSRC) at North Carolina State University and the Electric Power Research Institute (EPRI), as well as some of Baliga's publications. These papers document Baliga’s research interests and provide institutional, as well as ...
MoreThe B. Jayant Baliga Papers, 1973-2020, contain many records from the Power Semiconductor Research Center (PSRC) at North Carolina State University and the Electric Power Research Institute (EPRI), as well as some of Baliga's publications. These papers document Baliga’s research interests and provide institutional, as well as project, records vital to understanding the impact which B. Jayant Baliga has had in the fields of electrical and computer engineering. B. Jayant Baliga (1948- ) is an internationally recognized expert on power semiconductor devices. He is a member of the National Academy of Engineering and a Fellow of the IEEE (Institute of Electrical and Electronics Engineers). He spent 15 years at the General Electric Research and Development Center, Schenectady, New York, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. While at GE, he invented the Insulated Gate Bipolar Trannsistor (IGBT). He joined the faculty of North Carolina State University in 1988.
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