Title page for ETD etd-07292007-122149

Type of Document

Dissertation

Author

AL-AJMI, FAHED SHAMMAKH,

Author's Email Address

fsalajm@ncsu.edu

URN

etd-07292007-122149

Title

Stimulated Emission and Laser Action from Gallium Nitride, Aluminium Gallium Nitride, Aluminium Gallium Nitride/Gallium Nitride Quantum Wells and Heterostructures

Degree

PhD

Graduate Program

Electrical Engineering

Advisory Committee

Advisor Name	Title
Robert Kolbas	Committee Chair
Doug Barlage	Committee Member
John Muth	Committee Member
Mark Johnson	Committee Member
Veena Misra	Committee Member

Keywords

Stimulated emission
Phonon-assisted stimulated emission
Quantum well
Heterostructures
AlGaN/GaN
Laser action

Date of Defense

2007-07-26

Availability

unrestricted

Abstract

Stimulated emission and laser action at 77K and room temperature
from GaN and AlGaN epilayers grown by metal-organic vapor chemical
deposition on silicon substrates are presented. Electron-hole plasma
is found to be the responsible for stimulated emission in these
material at room temperature and 77K. Laser action with well
developed Fabry-Perot modes from multiple bands was achieved at
both temperatures from the GaN epilayer, A value of 2.9 is obtained
for the effective index of refraction at room temperature. Also,
stimulated emission from AlGaN/GaN single quantum wells and
heterostructures is demonstrated at 77K and room temperature.
Multiple bands exhibiting laser action are demonstrated from a 7.2
nm thick Al(0.06)Ga(0.94)N/GaN single quantum well at 77K and
room temperature, and an effective index of refraction of 2.70 is
obtained at room temperature. The shortest wavelength for laser
action from an Al(0.13)Ga(0.87)N/GaN heterostructures at room
temperature is also presented. Phonon-assisted stimulated emission
from AlGaN/GaN quantum wells is first observed in this work. Laser
action at 1LO down from multiple bands is demonstrated. Phonon
sideband laser action is also observed without any near band edge
stimulated emission at 77K.

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