Title page for ETD etd-07062005-212114

Type of Document

Master's Thesis

Author

Mann, David William,

URN

etd-07062005-212114

Title

90nm CMOS RF Driver Amplifier for WCDMA Mobile Applications

Degree

Master of Science

Graduate Program

Electrical Engineering

Advisory Committee

Advisor Name	Title
Dr. Kevin Gard	Committee Chair
Dr. Doug Barlage	Committee Member
Dr. W. Rhett Davis	Committee Member

Keywords

RF Transmitter
WCDMA
driver amplifier

Date of Defense

2005-06-23

Availability

unrestricted

Abstract

Integration is driving today?s cellular phone industry to create single chip cellphone
systems. With the integration of Radio Frequency Transmitters into CMOS technology,
robust circuits are needed that can scale with new technologies. This thesis explores the
challenges of designing a CMOS RF Driver Amplifier capable of outputting +10dBm of
power while meeting strict WCDMA cellphone standards. The driver amplifier (DA) is a
2.5V two-stage amplifier consisting of two on-chip inductors and a gain of greater than
20dB. The driver amplifier was had an Adjacent Channel Leakage Ratio (ACLR) of
-37dBm and -47dBm at 5MHz and 10MHz respectively. Less than 30mA of current was
consumed from a 2.5V power supply leading to an efficiency of 14.0%. The driver
amplifier noise seen in the receive band 190MHz away was -155dBm/Hz. With strict
noise constraints, future work will eliminate the need for the off SAW chip filter that is
utilized between the driver amplifier and the power amplifier to reduce driver amplifier
noise contribution.

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