Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

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US_6531354_B2_I.pdf (77.38 KB)

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2003

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Maria, J.-P., & Kingon, A. I. (2003). Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors. U.S. Patent No. 6,531,354. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/953

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