Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation
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2004
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Bae, C., & Lucovsky, G. (2004). Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation\. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 22(6), 2411-2418.
