2012 conference paper
Large-signal FET Models and a New AlGaN/GaN HFET model for power amplifier design
2012 IEEE International Conference on Wireless Information Technology and Systems (ICWITS).
A historical review of large-signal compact FET models is presented. Device models used in circuit design typically are based upon equivalent circuit techniques. However, it is possible to develop physics-based compact models. In this work, a new physics-based model for AlGaN/GaN HFETs that can be integrated into the commercial simulators is described. The new model has demonstrated good agreement between measured and simulated data for communications band power amplifiers.