2005 journal article

Aluminum nitride thin films on an LTCC substrate

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 88(7), 1977–1980.

By: J. Lee n, J. Cuomo n, Y. Cho* & R. Keusseyan*

co-author countries: Korea (Republic of) 🇰🇷 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

Aluminum nitride thin films deposited on a low‐temperature co‐fired ceramics substrate by reactive magnetron sputtering were investigated with regard to their crystal orientation and microstructural characteristics. Strong c ‐axis orientations of AlN thin films were observed when either a higher deposition temperature or an RF bias was adopted. This orientation was believed to be responsible for the high thermal conductivity of 26 W/mK for the AlN films deposited at 700°C under 25‐W bias. Photoluminescence spectrum in the wavelength range of 350–650 nm was analyzed to prove the involvement of potential oxygen‐related defects in the thin films.